10W Ultraminiature Encapsulated Single Output Supply; MSCA; MSCC10; MSCC-10; MCA10; MCA-10

General Specifications\n• Application: ITE\n• Cooling Type: Convection\n• Form Factor: Encapsulated\n• Size (mm): 95.8 x 54.9 x 25.4\n• Safety Approvals: UL60950-1 2nd ed.\n• Number of Outputs: 1\n• Output Voltage (V): 9.00\n• Frequency Range: 47-440Hz\n• Input Voltage Range: 90-264VAC;

10W Ultraminiature Modular Switching Power Supplies

文件：1.03722 Mbytes Page：5 Pages

10W Ultraminiature Modular Switching Power Supplies

文件：1.03722 Mbytes Page：5 Pages

Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ωgain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in c

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan