N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES ➤ Ultrafast body diode ➤ Rugged polysilicon gate cell structure ➤ Increased Unclamped Inductive Switching (UIS) capability ➤ Hermetically sealed, surface mount power package ➤ Low package inductance ➤ Very low thermal resistance ➤ Reverse polarity available upon request

N-Channel Enhancement Mode Power Mosfet

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N-Channel MOSFET

N-Channel Enhancement Mode Power Mosfet

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Silicon N-Channel Power MOSFET

General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

Silicon N-Channel Power MOSFET

General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

Fast Switching Speed

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N-Channel MOSFET in a TO-3P Plastic Package

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High Voltage Power Supplies

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