IXFH50N20价格

参考价格:¥34.2237

型号:IXFH50N20 品牌:IXYS 备注:这里有IXFH50N20多少钱,2025年最近7天走势,今日出价,今日竞价,IXFH50N20批发/采购报价,IXFH50N20行情走势销售排行榜,IXFH50N20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXFH50N20

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFH50N20

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFH50N20

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

IXFH50N20

N通道HiPerFET

Littelfuse

力特

Silicon N-Channel Power MOSFET

General Description: CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

HUAJING-MICRO

华润微电子

Silicon N-Channel Power MOSFET

General Description: CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

HUAJING-MICRO

华润微电子

Fast Switching Speed

文件:49.56 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET in a TO-3P Plastic Package

文件:870.58 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

High Voltage Power Supplies

文件:109.45 Kbytes Page:2 Pages

TDK

东电化

IXFH50N20产品属性

  • 类型

    描述

  • 型号

    IXFH50N20

  • 功能描述

    MOSFET DIODE Id50 BVdass200

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-28 16:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
25+
QFN
18000
原厂直接发货进口原装
IXYS/艾赛斯
22+
N/A
12245
现货,原厂原装假一罚十!
IXYS
95
8
公司优势库存 热卖中!!
IXYS
24+
TO-3P
5000
只做原装正品现货 欢迎来电查询15919825718
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS
23+
TO-3P
5000
原装正品,假一罚十
IXYS
24+
TO-247AD
1120
IXYS/艾赛斯
21+
NA
12820
只做原装,质量保证
IXYS/艾赛斯
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IXYS/艾赛斯
25+
TO-247
100
全新原装正品支持含税

IXFH50N20数据表相关新闻