位置：首页 > IC中文资料第6356页 > MSAEZ33N20A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MSAEZ33N20A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 |   | |
MSAEZ33N20A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | MICROCHIP 微芯科技 | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP | STMICROELECTRONICS 意法半导体 | |
MSAEZ33N20A产品属性
- 类型
描述
- 型号
MSAEZ33N20A
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
2016+ |
SSOP14 |
775 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI |
24+ |
SOT-5 |
2460 |
||||
TI |
23+ |
SOP |
5000 |
全新原装,支持实单,非诚勿扰 |
|||
TI |
23+ |
SOP |
3200 |
公司只做原装，可来电咨询 |
|||
原厂 |
22+ |
N/A |
20000 |
只做原装 |
|||
TI/德州仪器 |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TI/德州仪器 |
2450+ |
SOP |
9850 |
只做原装正品现货或订货假一赔十! |
|||
TI |
2511 |
SOP |
3200 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
TI |
25+ |
SSOP14 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TI |
05+ |
SOP |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
MSAEZ33N20A规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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