Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75␣Ωsystems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear ampli

Cascadable Silicon Bipolar MMIC Amplifier

Description\nThe MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75␣Ωsystems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifier • High Dynamic Range  Cascadable 50 Ω or 75 Ω Gain Block\n• 17.5 dBm Typical P1dB at 0.5 GHz\n• 3.5 dB Typical Noise Figure at 0.5 GHz;

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75␣Ωsystems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear ampli

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N