Surface Mount Si-Bridge-Rectifiers Si-Br짰kengleichrichter f짰 die Oberfl짰henmontage

Nominal current 0.5 A Alternating input voltage 40...500 V Plastic case 3 x 3 x 1.5mm Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Case Material: Molded Plastic. UL Flammabi

NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Case Material: Molded Plastic. UL Flammabi

SCHOTTKY BARRIER DIODE

[Fuji] Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

SCHOTTKY BARRIER DIODE

Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● High Current Capability ● VRRM 80 to 100 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories is connected in common, and

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories isconnected in common, and th

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories isconnected in common, and th

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories is connected in common, and

(401,408-word 쨈 16-bit) FIFO memory

GENERAL DESCRIPTION The MS81V06160 is a 6Mb FIFO (First-In First-Out) memory designed for 401,408-words × 16-bit high-speed asynchronous read/write operation. The MS81V06160 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large memory , and is not de

(664,320-word x 16-bit) FIFO memory

GENERAL DESCRIPTION The MS81V10160 is a 10Mb FIFO (First-In First-Out) memory designed for 664,320-words × 16-bit high-speed asynchronous read/write operation. The MS81V10160 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large memory , and is not desig

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

262,144-Word x 32-Bit x 2-Bank Synchronous Graphics RAM

DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words x 32 bits x 2 banks. This device can operate up to 143 MHz by using synchronous interface. In addition, it has 8-column Block Write function and Write per bit function which improves performance in

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

393,216-Word 횞 32-Bit 횞 4-Bank FIFO-SGRAM

GENERAL DESCRIPTION The MS82V48540 is a 48-Mbit system clock synchronous dynamic random access memory. In addition to the conventional random read/write access function, the MS82V48540 provides the automatic row address increment function and automatic bank switching function. Therefore, if once

393,216-Word 횞 32-Bit 횞 4-Bank FIFO-SGRAM

GENERAL DESCRIPTION The MS82V48540 is a 48-Mbit system clock synchronous dynamic random access memory. In addition to the conventional random read/write access function, the MS82V48540 provides the automatic row address increment function and automatic bank switching function. Therefore, if once

393,216-Word 횞 32-Bit 횞 4-Bank FIFO-SGRAM

GENERAL DESCRIPTION The MS82V48540 is a 48-Mbit system clock synchronous dynamic random access memory. In addition to the conventional random read/write access function, the MS82V48540 provides the automatic row address increment function and automatic bank switching function. Therefore, if once

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175 °C Junction Temperature ● High Current Capability ● Vrrm 30 To 45 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175 °C Junction Temperature ● High Current Capability ● Vrrm 30 To 45 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

GaAs Schottky Diodes TM Low RS Series Pair

Description The MS8350 is a GaAs flip chip series pair Schottky device designed for use as balanced mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and

GaAs Schottky Diodes Low CT TM Series Pair

Description The MS8351 is a GaAs flip chip series pair Schottky device designed for use as balanced mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include: transceivers, digital radios and

Schottky Barrier Diode

Features • Low VF • Super high speed switching • High reliability by planer design Applications • High speed power switching

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175 °C Junction Temperature ● High Current Capability ● Vrrm 30 To 45 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175 °C Junction Temperature ● High Current Capability ● Vrrm 30 To 45 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Low IR Schottky Barrier Diode

Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter

Schottky Barrier Diode

Schottky Barrier Diode

Recording and Playback IC with Built-in 2-Mbit DRAM

GENERAL DESCRIPTION The MS87V1021 is a single chip recording and playback IC that is controlled by the microcontroller in serial mode, compresses voice with the 4-bit OKI ADPCM algorithm or 4-bit OKI ADPCM2 algorithm with high tone quality, and has 2-Mbit DRAM in which recorded data is stored and

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● High Current Capability ● VRRM 80 to 100 Volts

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● High Current Capability ● VRRM 80 to 100 Volts

Surface Mount Si-Bridge-Rectifiers

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GaAs Schottky Diodes

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GaAs Schottky Diodes

文件：134.2 Kbytes Page：3 Pages

GaAs Schottky Diodes

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GaAs Schottky Diodes

文件：134.2 Kbytes Page：3 Pages

DC AXIAL FANS

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