1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz

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RF/Microwave Si BJT Power Devices & Pallets

N沟道 MOSFET

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

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60 Voice smart with LCD

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