RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. KEY FEATURES ◾ 350 Watts @ 10µSec Pulse Width, 10 Duty Cycle ◾ 300 Watts @ 250µSec

RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

DESCRIPTION: The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 350 WATTS @ 10µSEC PULSE WIDTH, 10 DUTY CYCLE • 300 WATTS @ 250µSEC PULSE WIDTH 10 DUT

RF/Microwave Si BJT Power Devices & Pallets

T1 Receive Buffer

DESCRIPTION The DS2176 is a low–power CMOS device specifically designed for synchronizing receive side loop–timed T–carrier data streams with system side timing. The device has several flexible operating modes which simplify interfacing incoming data to parallel and serial TDM backplanes. The dev

70MHz/1mA Current Mode Feedback Amp W/Disable

The EL2176/EL2276 are single/dual current-feedback operational amplifiers which achieve a -3dB bandwidth of 70MHz at a gain of +1 while consuming only 1mA of supply current per amplifier. Features • Single (EL2176) and dual (EL2276) topologies • 1mA supply current (per amplifier) • 70MHz -3dB

70 MHz/1 mA Current Mode Feedback Amp w/Disable

文件：359.68 Kbytes Page：20 Pages

70 MHz/1 mA Current Mode Feedback Amp w/Disable

文件：359.68 Kbytes Page：20 Pages