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MS2176中文资料

厂家型号

MS2176

文件大小

187.45Kbytes

页面数量

4

功能描述

RF & MICROWAVE TRANSISTORS

RF POWER TRANSISTOR BIPOLAR/HBT

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICROSEMI

MS2176数据手册规格书PDF详情

DESCRIPTION

The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.

KEY FEATURES

◾ 350 Watts @ 10µSec Pulse Width, 10 Duty Cycle

◾ 300 Watts @ 250µSec Pulse Width 10 Duty Cycle

◾ 9.5 dB Min. Gain

◾ Refractory Gold Metallization

◾ Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness

◾ Infinite VSWR Capability At Specified Operating Conditions

Applications

◾ UHF Pulsed

MS2176产品属性

  • 类型

    描述

  • 型号

    MS2176

  • 制造商

    Microsemi Corporation

  • 功能描述

    RF POWER TRANSISTOR BIPOLAR/HBT