RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 – 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions. KEY FEATURES ◾

RF & MICROWAVE TRANSISTORS

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

3MTM Hi?밫ack Conformable Double Coated Tape

文件：49.7 Kbytes Page：2 Pages

24 AWG stranded (7x32) TC conductor, polyolefin insulation, individually shielded Beldfoil

文件：87.09 Kbytes Page：3 Pages