RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15 dB • COMMON EMIT

RF & MICROWAVE TRANSISTORS HF SSB APPLICATION

Features • 30MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15dB • COMMON EMITTER CONFIGURATION

封装/外壳：M113 包装：散装 描述：RF TRANS NPN 18V 30MHZ M113 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

Hall Effect Latch for High Temperature Operation

Description These Hall-effect latches are extremely temperature-stable and stress resistant sensor ICs especially suited for operation over extended temperature ranges to 150°C. Superior high temperature performance is made possible through a novel Schmitt trigger circuit that maintains operate a

Wide-Vue Style Analog Panel Meters

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Variable RF Inductor

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KNOB

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Wide-Vue Style Analog Panel Meters

文件：357.94 Kbytes Page：3 Pages