RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • OPTIMIZED FOR SSB • 30 MHz • 50 VOLTS • IMD — 30 dB • GOLD METALLIZATION

10 AMP SCHOTTKY BARRIER RECTIFIER

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超声波测量模拟前端

超声波测量模拟前端，内部集成低噪声放大器，可编程增益放大器，温度传感器

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers

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Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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