| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MS-2212 | Technical Article 文件:248.36 Kbytes Page:5 Pages | AD 亚德诺 | ||
Reedsensor 文件:164.14 Kbytes Page:2 Pages | PIC | |||
霍尔传感器 | PIC | |||
封装/外壳:圆柱形,有螺纹 - M12 包装:盒 描述:REED SENSOR M12 METAL THREAD 传感器,变送器 磁性传感器 - 位置,接近,速度(模块) | PIC | |||
封装/外壳:圆柱形,有螺纹 - M12 包装:散装 描述:REED SENSOR M12 METAL THREAD 传感器,变送器 磁性传感器 - 位置,接近,速度(模块) | PIC | |||
Leistungs-Reedsensor 文件:164.11 Kbytes Page:2 Pages | PIC | |||
霍尔传感器 | PIC | |||
霍尔传感器 | PIC | |||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | POLYFET | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. | PANASONIC 松下 | |||
NPN SILICON BIAS RESISTOR TRANSISTOR 文件:150.44 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
SINGLE-SLOT, PARALLEL INTERFACE POWER SWITCH FOR LOW POWER PC CARD SLOTS 文件:296.94 Kbytes Page:20 Pages | TI 德州仪器 |
MS-2212产品属性
- 类型
描述
- 工作温度:
-20℃~+85℃
MS-2212规格书下载地址
MS-2212参数引脚图相关
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MS-2212数据表相关新闻
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DdatasheetPDF页码索引
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