Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 12 Volt

封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 15V 3.55GHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

3.5 GHz，4.5 W，12 V功率FET GaAs pHEMT

1-pole/2-pole 16A polarized power relays Variety of contact arrangements

FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c

35.0 AMPS. HIGH CURRENT PLASTIC SILICON RECTIFIERS

35.0 AMPS. HIGH CURRENT PLASTIC SILICON RECTIFIERS Voltage Range 50 to 1000 VOLTS Current 35.0 Amperes

35.0 AMPS. HIGH CURRENT PLASTIC SILICON RECTIFIERS

35.0 AMPS. HIGH CURRENT PLASTIC SILICON RECTIFIERS Voltage Range 50 to 1000 VOLTS Current 35.0 Amperes

HIGH CURRENT PLASTIC SILICON RECTIFIER

文件：230.59 Kbytes Page：3 Pages

HIGH CURRENT PLASTIC SILICON RECTIFIER

文件：230.59 Kbytes Page：3 Pages