RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geom

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951V3 is Designed for high gain. Low noise small-signal amplifiers applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System

PCB connector Screw connection, wire entrance vertical to PCB

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Screw/solder terminal strip Screw/solder tag connection

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AC Rated, Round Axial Leaded, UL 810 Fail Safe, Rated 10,000 AFCLMax.

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Socket terminal strip Plug connection, plug-in direction vertical to PCB

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PCB connector Screw connection, wire entrance vertical to PCB, extended insertion length

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