RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs

RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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