RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs

RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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封装/外壳：NI-360 包装：散装 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：364.72 Kbytes Page：11 Pages

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

INSULATED PC SPACERS/SUPPORTS

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Snap Rivets

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Nytye® Push Rivets

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Nylon PCB Supports - Rivet Mount

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