945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in

封装/外壳：TO-272-2 包装：散装 描述：FET RF 65V 945MHZ TO272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-270AA 包装：散装 描述：FET RF 65V 945MHZ TO270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

T1/E1/OC3 System Synchronizer

Description The MT9045 T1/E1/OC3 System Synchronizer contains a digital phase-locked loop (DPLL), which provides timing and synchronization signals for multitrunk T1 and E1 primary rate transmission links and STS-3/OC3 links. The MT9045 generates ST-BUS clock and framing signals that are

Dual Synchronous DC/DC converter controller

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VIDEO PROCESSOR AND INPUT SELECTOR

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