RF POWER TRANSISTOR

The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804-960 MHz.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Epitaxial Die Construction • Ideally Suited for Automatic Insertion • 310 mW Power Dissipation • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

丝印代码：T106；NPN General Purpose Transistor

Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching