RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators Features • Maximum Available Gain = 17dB @ 300MHz • High fT – 1.2 GHz typical

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF5943C is a High Frequency Transistor for General Purpose Amplifier Applications.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz

Voltage regulator diodes

DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plas

SILICON 3.0 WATT ZENER DIODES

Features • For Surface Mount Applications (flat handling surface for accurate placement) • Zener Voltage 3.3V to 200V • Withstands Large Surge Stresses • Electrically Equivalent to JEDEC Registered Series IN5913 through IN5956 • High Surge Current Rating Mechanical Data • Package similar

SILICON 1.5 WATT ZENER DIODES SURFACE MOUNT

DESCRIPTION The SMBJ5913-5956B or SMBG5913-5956Bseries of surfacemount 3.0 watt Zeners providesvoltage regulation in a selection from 3.3to 200 volts with different tolerancesasidentified by suffix letter on the part number. This series is equivalent to the JEDEC registered1N5913 thru 1N5956B w

1.5W SILICON SURFACE MOUNT ZENER DIODES

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