NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.7V(Max) @IC=150mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

封装/外壳：E-Line-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 1A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：56.91 Kbytes Page：2 Pages

NPN, 100V, 1A, E-Line

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：56.91 Kbytes Page：2 Pages

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN 100V 1A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-CHANNEL POWER MOSFETS

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.