NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

Trans RF BJT NPN 35V 5A

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31 series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum