150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

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The RF MOSFET Line 150W, 500MHz, 28V

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The RF MOSFET Line 150W, 500MHz, 28V

文件：639.96 Kbytes Page：19 Pages

封装/外壳：375-04 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 2CH 65V 500MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line 150W, 500MHz, 28V

The RF MOSFET Line

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The RF MOSFET Line 150W, 500MHz, 28V

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High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

SUBMINIATURE FUSES - Picofuse Lead Free

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DIGITAL COMBINATION VACUUM GAUGE SYSTEM

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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5 x 3 x 0.75 Inches form factor

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