The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

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RF MOSFET

RF Power Field Effect Transistor

2110-2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. • W-CDM

2110-2170 MHz, 120 W, 28 V, Lateral N-Channel RF Power MOSFET

2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V