The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

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RF MOSFET

RF Power Field Effect Transistor

2110-2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. • W-CDM

2110-2170 MHz, 120 W, 28 V, Lateral N-Channel RF Power MOSFET

2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET

120 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX

Description Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is s

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages