2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：479.17 Kbytes Page：11 Pages

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：479.17 Kbytes Page：11 Pages

封装/外壳：NI-400 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-400 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：479.17 Kbytes Page：11 Pages

封装/外壳：NI-400S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-400S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra

45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：419.82 Kbytes Page：9 Pages