RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source

2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

[CREE] This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the

2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

[CREE] This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the

2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

[CREE] This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the