NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

30 W, 136–220 MHz RF POWER TRANSISTORS NPN SILICON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications.FEATURES INCLUDE:\n• High Common Emitter Power Gain\n• Output Power = 30 W

Trans RF BJT NPN 16V 8A 4-Pin Case 211-07

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

LM1946 Over/Under Current Limit Diagnostic Circuit

文件：216.23 Kbytes Page：12 Pages

LM1946 Over/Under Current Limit Diagnostic Circuit

文件：216.23 Kbytes Page：12 Pages

LM1946 Over/Under Current Limit Diagnostic Circuit

文件：216.23 Kbytes Page：12 Pages