NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

30 W, 136–220 MHz RF POWER TRANSISTORS NPN SILICON

NPN SILICON RF POWER TRANSISTOR

Trans RF BJT NPN 16V 8A 4-Pin Case 211-07

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

MALE/FEMALE THREADED STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

Internally Matched LNA Module

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Internally Matched LNA Module

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SENSORLESS BLDC MOTOR CONTROL AND BEMF SAMPLING METHODS WITH ST7MC

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