RF POWER FIELD EFFECT TRANSISTORS

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45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

Low Vf Schottky PowerMod

● Guard Ring Protection ● Electrically Isolated Base ● Schottky Barrier Rectifier ● Low Forward Voltage ● Reverse Energy Tested ● VRRM 35 to 50 Volts ● ROHS Compliant

Low Vf Schottky Powermod

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