RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Array LED 2 mm LED, Diffused

Features ● colored, diffused package ● for use as optical indicator ● available as multiple array (LED) ● load dump resistant acc. to DIN 40839

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE