The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

1.0 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance, High Temperature

FEATURES • Useful life: up to 2000 h at 125 °C • Very low ESR and high ripple current • Voltages up to 50 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance, High Temperature

文件：106.93 Kbytes Page：8 Pages

DUAL HIGH VOLTAGE/VERY HIGH CURRENT OPERATIONAL AMPLIFIER

文件：382.57 Kbytes Page：6 Pages

DUAL HIGH VOLTAGE/VERY HIGH CURRENT OPERATIONAL AMPLIFIER

文件：382.57 Kbytes Page：6 Pages