LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

N-Channel Enhancement-Mode Lateral MOSFET

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RF POWER MOSFET

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N-Channel Enhancement-Mode Lateral MOSFET

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Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Extended useful life: up to 5000 h at 105 °C • Very low ESR and high ripple current • Voltages up to 50 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

BATTERY HOLDER (2)

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BATTERY HOLDER (2)

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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