LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

N-Channel Enhancement-Mode Lateral MOSFET

文件：529.7 Kbytes Page：4 Pages

RF POWER MOSFET

1.0 GHz, 85 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER MOSFET

文件：37.04 Kbytes Page：1 Pages

N-Channel Enhancement-Mode Lateral MOSFET

文件：529.7 Kbytes Page：4 Pages

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Extended useful life: up to 5000 h at 105 °C • Very low ESR and high ripple current • Voltages up to 50 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

BATTERY HOLDER (2)

文件：261.14 Kbytes Page：1 Pages

BATTERY HOLDER (2)

文件：261.14 Kbytes Page：1 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

文件：106.89 Kbytes Page：8 Pages