RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles