NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: • Omnigold™ Metalization System • Diffused Ballast Resistors. • Internal Matching Network

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output Power — 50 Watts Power Gain —

RF Manual 16th edition

50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz

GENERAL DESCRIPTION The 0510-50A is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 500-1000 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure improved ruggedness and high reliability.