| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. 創瑞科技AiT創瑞科技 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.97664 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
M/A-COM |
22+ |
LGA10 |
8200 |
全新原装现货!自家库存! |
|||
MA/COM |
22+ |
LGA10 |
32350 |
原装正品 假一罚十 公司现货 |
|||
M/A-COM |
22+ |
LGA10 |
8000 |
原装正品支持实单 |
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MA/COM |
01+ |
LGA10 |
970 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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M/A-COM |
2021+ |
LGA10 |
7968 |
百分百原装正品 |
|||
M/A-COM |
23+ |
LGA10 |
50000 |
全新原装正品现货,支持订货 |
|||
M/A-COM |
21+ |
LGA10 |
19960 |
||||
MA/COM |
LGA10 |
37526 |
只做原装货值得信赖 |
||||
AAC |
23+ |
868800 |
只做原装正品，欢迎来电咨询！ |
||||
M/A-COM |
LGA10 |
68900 |
原包原标签100%进口原装常备现货! |
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DdatasheetPDF页码索引
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