金属化聚丙烯膜轴向电容器（CBB20）

介质：聚丙烯膜 \n\n电极：金属真空蒸发层\n\n封装：PET胶带包裹;两端阻燃环氧树脂封装（UL94 V-0）\n\n形状：圆柱形或椭圆柱形\n\n引脚：镀锡铜包钢线（CP线）或PVC电子线 体积小，有良好自愈性；高频损耗小，温升低；高冲击强度；高频交流条件下有良好的耐压性能。;

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package