桥式整流器

MP8/IF:8A/ Vol:800V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

Bridge

SILICON BRIDGE RECTIFIERS

文件：96.24 Kbytes Page：2 Pages

SILICON BRIDGE RECTIFIERS

文件：152.28 Kbytes Page：3 Pages

Silicon Bridge Rectifiers

文件：403.85 Kbytes Page：3 Pages

SILICON BRIDGE RECTIFIERS

文件：97.74 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE

文件：125.13 Kbytes Page：2 Pages

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

文件：285.24 Kbytes Page：2 Pages

Kool-Pak Power Film Resistors

文件：129.81 Kbytes Page：2 Pages

Bridge Rectifier

文件：112.21 Kbytes Page：6 Pages

SILICON BRIDGE RECTIFIERS

文件：33.39 Kbytes Page：2 Pages

桥式整流器

MP8/IF:8A/ Vol:800V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

Glass Passivated Bridge Rectifiers

文件：330.87 Kbytes Page：3 Pages

GLASS PASSIVATED BRIDGE RECTIFIERS

文件：33.46 Kbytes Page：2 Pages

GLASS PASSIVATED BRIDGE RECTIFIERS

文件：99.17 Kbytes Page：2 Pages

GLASS PASSIVATED BRIDGE RECTIFIERS

文件：92.79 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)