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MP808G

桥式整流器

MP8/IF:8A/ Vol:800V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

HY

虹扬科技

MP808G

GLASS PASSIVATED BRIDGE RECTIFIERS

文件:92.79 Kbytes Page:2 Pages

GOOD-ARK

固锝电子

MP808G

GLASS PASSIVATED BRIDGE RECTIFIERS

文件:33.46 Kbytes Page:2 Pages

HY

虹扬科技

MP808G

GLASS PASSIVATED BRIDGE RECTIFIERS

文件:99.17 Kbytes Page:2 Pages

HY

虹扬科技

MP808G

Glass Passivated Bridge Rectifiers

文件:330.87 Kbytes Page:3 Pages

HY

虹扬科技

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

MP808G产品属性

  • 类型

    描述

  • VRRM(V):

    800

  • IO(A):

    8

  • IFSM(A):

    175

  • VF(V):

    1.10

  • IR(uA):

    10

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