桥式整流器

MP8/IF:8A/ Vol:600V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

Bridge

SILICON BRIDGE RECTIFIERS

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SINGLE-PHASE SILICON BRIDGE

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TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

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Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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丝印代码：MP8060EU；16V, 3.5A Quad Channel Power Half-Bridge

文件：322.12 Kbytes Page：10 Pages

桥式整流器

MP8/IF:8A/ Vol:600V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/

Glass Passivated Bridge Rectifier

Features • Surge overload rating -175 amperes peak • Low forward voltage drop • Small size; simple installation • Sliver plated copper leads

16V, 3.5A Quad Channel Power Half-Bridge

文件：322.12 Kbytes Page：10 Pages

GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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POWER TRANSISTORS(8.0A,150-200V,60W)

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)