INSULATED GATE BIPOLAR TRANSISTOR

High Power Switching Applications. Motor Control Applications ● The Electrodes are Isolated from Case ● 6 IGBTs are Built Into 1 Package. ● Enhancement-mode

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

INSULATED GATE BIPOLAR TRANSISTOR

Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications)

Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications)

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GTR MODULE SILICON N CHANNEL LGBT

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TOSHIBA GTR Module Silicon N Channel IGBT

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FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1085 A Surge current 15 kA

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

Power Operational Amplifier

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Power Operational Amplifier

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