带电流采样和 DIR/ENBL控制功能的 40V、5A、H 桥直流电机驱动器

MP6612D是一款用于驱动可逆电机的H桥电机驱动器，它可以驱动直流电机、步进电机绕组或其他负载。其H 桥由4个 N 沟道功率 MOSFET 和一个内部电荷泵组成，电荷泵可生成所需的栅极驱动电压。\n\n MP6612的输出控制由 IN1 和 IN2 引脚完成；MP6612D的输出控制则由 DIR 和 ENBL 引脚完成。除此之外，这两个器件完全相同。\n\n MP6612D可在 4V 至 40V 的电机电源电压范围内通过逻辑控制提供高达 5A 的输出电流 (IOUT)。当器件被禁用时，也能实现超低待机静态电流 (IQ)。\n\n MP6612D通过内部电流采样 • 4V 至 40V 宽工作输入电压 (VIN) 范围\n• 电流采样：精度达10%\n• 低导通电阻 (RDS(ON))：\n• 45mΩ 下管MOSFET (LS-FET)\n• MP6612：IN1 和 IN2 逻辑输入\n• 两个 LS-FET 均导通时的低静态电流 (IQ) 制动模式\n• 过流保护 (OCP)、过压保护 (OVP) 和过温保护 (OTP) 故障指示\n• 采用 TSSOP-20EP 封装;

Motor Control Circuits

■ Overview The AN6612 and the AN6612S are the electronic governor circuits suitable for the rotating speed control of a low voltage and compact DC motor which is used for a small tape recorder, etc. ■ Features • Wide range of operating voltage : VCC (opr) =1.8V ~ 8V • 2 package types • Fewer

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

LU6612 FASTCAT TM Single-FET for 10Base-T/100Base-TX

Description The LU6612 is a single-channel, single-chip complete transceiver designed specifically for dual-speed 10Base-T and 100Base-TX repeaters and switches. LU6612 implements: ■ The 10Base-T transceiver function of IEEE 802.3u. ■ The physical coding sublayer (PCS) of IEEE 802.3u. ■ The p

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.