N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

N-Channel, Logic Level, PowerTrench™ MOSFET

N 沟道，PowerTrench® MOSFET，30V，30A，20mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •30 A，30 V。\n•RDS(on) = 20 mΩ @ VGS = 10 V\n•RDS(on) = 28 mΩ @ VGS = 4.5 V\n•低栅极电荷（典型值9 nC）。\n•快速开关\n•高性能沟道技术可实现极低的RDS(ON);

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

30V N-Channel PowerTrench MOSFET

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Motor Control Circuits

■ Overview The AN6612 and the AN6612S are the electronic governor circuits suitable for the rotating speed control of a low voltage and compact DC motor which is used for a small tape recorder, etc. ■ Features • Wide range of operating voltage : VCC (opr) =1.8V ~ 8V • 2 package types • Fewer

LU6612 FASTCAT TM Single-FET for 10Base-T/100Base-TX

Description The LU6612 is a single-channel, single-chip complete transceiver designed specifically for dual-speed 10Base-T and 100Base-TX repeaters and switches. LU6612 implements: ■ The 10Base-T transceiver function of IEEE 802.3u. ■ The physical coding sublayer (PCS) of IEEE 802.3u. ■ The p

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.