POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = −5 A (max) • High DC cu

POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

Dual 4-bit latch

DESCRIPTION The HEF4508B is a dual 4-bit latch, which consists of two identical independent 4-bit latches with separate strobe (ST), master reset (MR), output-enable input (EO) and 3-state outputs (O). With the ST input in the HIGH state, the data on the D inputs appear at the corresponding outp

Dual 4-bit latch

DESCRIPTION The HEF4508B is a dual 4-bit latch, which consists of two identical independent 4-bit latches with separate strobe (ST), master reset (MR), output-enable input (EO) and 3-state outputs (O). With the ST input in the HIGH state, the data on the D inputs appear at the corresponding outp

Dual 4-bit latch

DESCRIPTION The HEF4508B is a dual 4-bit latch, which consists of two identical independent 4-bit latches with separate strobe (ST), master reset (MR), output-enable input (EO) and 3-state outputs (O). With the ST input in the HIGH state, the data on the D inputs appear at the corresponding outp