GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

Glass Passivated Bridge Rectifier

Features • Surge overload rating -175 amperes peak • Low forward voltage drop • Small size; simple installation • Sliver plated copper leads

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES ● Surge overload rating -200 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

桥式整流器

MP8/IF:8A/ Vol:50V/ VF@IF:5A=>1.1V/ Tj:-55~150℃/

Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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SMD Glass Passivated Bridge Rectifiers

Features - Low forward voltage drop. - Small size ; simple installation. - Sliver plated copper leads - Surge overload rating - 200 amperes peak. - Materials used carries U/L recognition.

GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

文件：425.22 Kbytes Page：3 Pages

封装/外壳：4-方形，MP-8 包装：管件 描述：BRIDGE RECT 1PHASE 50V 10A MP8 分立半导体产品 二极管 - 桥式整流器

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode a

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup DiodeThe MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicat

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

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