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MOC213M价格

参考价格:¥1.2047

型号:MOC213M 品牌:Fairchild 备注:这里有MOC213M多少钱,2026年最近7天走势,今日出价,今日竞价,MOC213M批发/采购报价,MOC213M行情走势销售排行榜,MOC213M报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MOC213M

Small Ouline Optocouplers Transistor Output

Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the

FAIRCHILD

仙童半导体

MOC213M

Small Ouline Optocouplers Transistor Output

Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the

FAIRCHILD

仙童半导体

MOC213M

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient P

ONSEMI

安森美半导体

MOC213M

8 引脚 SOIC 单沟道光电晶体管输出光耦合器

这些器件由砷化镓红外线发光二极管组成,二极管以光学方式耦合到单片硅光电晶体管检测器上,采用可表面帖装的小型塑料封装。 它们非常适合高密度应用,并且无需通过电路板安装。 • 严格匹配的电流传输比\n• 保证最低 70 V 的 BVCEO\n• MOC205M, MOC206M, MOC207M\n• 保证最低 30 V 的 BVCEO\n• MOC211M, MOC212M, MOC213M, MOC216M,MOC217M\n• 所需 LED 输入电流低,更易于实现逻辑接口\n• MOC216M, MOC217M\n• 方便的塑胶 SOIC-8 可表面贴装封装类型,引脚间距为 0.050\"\n• 安全和法规认证:\n• UL1577,2500 VACRMS(1 分钟)\n• DIN-EN/IEC60747-5-5,565 V 峰值工作绝缘电压;

ONSEMI

安森美半导体

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

丝印代码:D213;DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

MOTOROLA

摩托罗拉

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件:325.65 Kbytes Page:21 Pages

TI

德州仪器

MOC213M产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Channels:

    1

  • CTR (Min) (%):

    100

  • CTR tested @ IF (mA):

    10

  • VCE(sat) (Max) (V):

    0.4

  • BVCEO (Min) (V):

    30

  • BVCBO (Min) (V):

    70

  • BVECO (Min) (V):

    7

  • ton (Max) (µs):

    7.5

  • toff (Max) (µs):

    5.7

  • VISO (Min) (V):

    2500

  • TOPR (Min) (°C):

    -40

  • TOPR (Max) (°C):

    100

  • Package Type:

    SOIC-8

更新时间:2026-8-3 23:01:00
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一级代理,专注军工、汽车、医疗、工业、新能源、电力
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百域芯优势 实单必成 可开13点增值税
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正规渠道,大量现货,只等你来。
ONSEMI
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8-SOIC
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全新 发货1-2天

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