0.5-10 GHz General Purpose Gallium Arsenide FET

Description The ATF-25570 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET

bq25570 nano power boost charger and buck converter for energy harvester powered applications

1 Features 1• Ultra Low Power DC-DC Boost Charger – Cold-Start Voltage: VIN ≥ 600 mV – Continuous Energy Harvesting From VIN as low as 100 mV – Input Voltage Regulation Prevents Collapsing High Impedance Input Sources – Full Operating Quiescent Current of 488 nA (typical) – Ship Mode with

Ultra Low Power Harvester Power Management IC with Boost Charger, and Nano-Powered Buck Converter

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Ultra Low Power Harvester Power Management IC with Boost Charger, and Nano-Powered Buck Converter

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Ultra Low Power Harvester Power Management IC with Boost Charger

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