Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono

Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

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Digital Transistors (BRT)

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NPN SILICON BIAS RESISTOR TRANSISTOR

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consistin

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti

Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono

包装：剪切带（CT） 描述：TRANS BRT NPN 100MA 50V SOT23 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Bias Resistor Transistor

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Bias Resistor Transistor

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TRANS PREBIAS NPN 246MW SOT23-3

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Bias Resistor Transistor

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Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

文件：110.08 Kbytes Page：12 Pages

Digital Transistors (BRT)

文件：140.42 Kbytes Page：12 Pages

Bias Resistor Transistor NPN Silicon Surface Mount Transistor

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双极晶体管 - 预偏置 100mA 50V BRT NPN

Indoor/Outdoor Stadium Cable, RG-11/U Triax, 14 AWG solid, CMR

Product Description RG-11/U Triax, 14 AWG solid .064 bare copper conductor, gas-injected foam HDPE insulation, bare copper double shields (95 and 80 coverage), PVC insulation between braids, water blocking tape, CPE jacket, CMR rated

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards

General Description BD2232G and BD2233G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2232G and BD2233G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Fe

INTERCONNECT BATTERY HOLDERS

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Snap Bushings

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Ultra-power CMOS Dual Output Unipolar Hall Effect Switch

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