MMUN2233晶体管资料
MMUN2233别名：MMUN2233三极管、MMUN2233晶体管、MMUN2233晶体三极管
MMUN2233生产厂家：
MMUN2233制作材料：Si-N+R
MMUN2233性质：表面帖装型 （SMD）
MMUN2233封装形式：贴片封装
MMUN2233极限工作电压：50V
MMUN2233最大电流允许值：0.1A
MMUN2233最大工作频率：<1MHZ或未知
MMUN2233引脚数：3
MMUN2233最大耗散功率：0.4W
MMUN2233放大倍数：β>35
MMUN2233图片代号：H-15
MMUN2233vtest：50
MMUN2233htest：999900
- MMUN2233atest：0.1
MMUN2233wtest：0.4
MMUN2233代换 MMUN2233用什么型号代替：DTC143ZK,RN1406,2SC4146,
MMUN2233价格
参考价格：￥0.0671
型号：MMUN2233LT1G 品牌：ON 备注：这里有MMUN2233多少钱，2026年最近7天走势，今日出价，今日竞价，MMUN2233批发/采购报价，MMUN2233行情走势销售排行榜，MMUN2233报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMUN2233 | SOT-23 Plastic-Encapsulate Bias Resistor Transistor SOT-23 Plastic-Encapsulate Bias Resistor Transistor NP N Silicon | HDSEMI 海德半导体 |   | |
MMUN2233 | Bias Resistor Transistor NPN Silicon Bias Resistor Transistor NPN Silicon P/b Lead(Pb)-Free | WEITRON | | |
MMUN2233 | Bias Resistor Transistor 文件：470.99 Kbytes Page：10 Pages | WEITRON | | |
MMUN2233 | 数字三极管 | CHINABASE 创基电子 | | |
Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consistin | MOTOROLA 摩托罗拉 | | ||
Digital Transistor Features Epitaxial planar die construction © Builtin biasing resistors (Ri: 4.7K, Re: 470) © Also available in lead free version © RoHS compliant with Halogen-free. | TECHPUBLIC 台舟电子 | | ||
Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consi | ETL 亚历电子 | | ||
Bias Resistor Transistor Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | LRC 乐山无线电 | | ||
Digital Transistors (BRT) 文件：140.42 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k 文件：110.08 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
包装：剪切带（CT） 描述：TRANS BRT NPN 100MA 50V SOT23 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
TRANS PREBIAS NPN 246MW SOT23-3 | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：104.94 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor 文件：177.51 Kbytes Page：18 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k 文件：110.08 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：140.42 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
双极晶体管 - 预偏置 100mA 50V BRT NPN | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
2-INPUT SINGLE VIDEO SWITCH 文件：253.26 Kbytes Page：8 Pages | NJRC 日本无线 | | ||
2-INPUT SINGLE VIDEO SWITCH 文件：253.26 Kbytes Page：8 Pages | NJRC 日本无线 | | ||
2-INPUT SINGLE VIDEO SWITCH 文件：253.26 Kbytes Page：8 Pages | NJRC 日本无线 | | ||
2-INPUT SINGLE VIDEO SWITCH 文件：253.26 Kbytes Page：8 Pages | NJRC 日本无线 | | ||
2-INPUT SINGLE VIDEO SWITCH 文件：253.26 Kbytes Page：8 Pages | NJRC 日本无线 | |
MMUN2233产品属性
- 类型
描述
- R1(KΩ)：
4.7
- R2(KΩ)：
47
- VO(V)：
50
- IO(A)：
0.1
- PD(W)：
0.2
- IO(OFF)(uA)：
0.5
- IO(OFF)(V)：
50
- VO(ON)(V)：
0.25
- VO(ON)IO(mA)：
10
- VO(ON)II(mA)：
1
- G1：
>80
- G1VO(V)：
10
- G1IO(mA)：
5
- PackageOutline：
SOT-23
- Arrays：
BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
VISHAY/威世 |
ROHS .original |
SMD |
2390 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
VISHAY |
25+ |
N/A |
20000 |
原装 |
|||
VISHAY |
25+ |
SMD |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
VISHAY/威世 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Vishay |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
VISHAY/威世 |
23+ |
SMD |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY/威世 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
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MMUN2233规格书下载地址
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2019-11-15MNLM129A-X-精密基准
一般描述 该LM129是多方面的，当前的温度补偿的6.9V稳压管的参考与精密 10至100倍以上的分立二极管少动态阻抗。建于一单硅芯片，LM129使用有源电路来缓冲允许内部齐纳器件工作在0.5 mA至15毫安范围内几乎没有变化性能。该LM129是选择的温度系数为0.001可用，0.002，0.005和0.01％/ c.这些新的引用也有良好的长期稳定性和低噪音。齐纳击穿一个新的地下使用的LM129提供低噪声和更好的长期稳定性比coventional集成电路齐纳二极管。进一步Zener和温度补偿晶体管是由一个平面进程，以便他们有免疫问题困扰普通的齐纳二极管。例如，几乎没有在齐纳
2013-3-17
DdatasheetPDF页码索引
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