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MMUN2211晶体管资料
MMUN2211别名：MMUN2211三极管、MMUN2211晶体管、MMUN2211晶体三极管
MMUN2211生产厂家：
MMUN2211制作材料：Si-N+R
MMUN2211性质：表面帖装型 （SMD）
MMUN2211封装形式：贴片封装
MMUN2211极限工作电压：50V
MMUN2211最大电流允许值：0.1A
MMUN2211最大工作频率：<1MHZ或未知
MMUN2211引脚数：3
MMUN2211最大耗散功率：0.4W
MMUN2211放大倍数：β>35
MMUN2211图片代号：H-15
MMUN2211vtest：50
MMUN2211htest：999900
- MMUN2211atest：0.1
MMUN2211wtest：0.4
MMUN2211代换 MMUN2211用什么型号代替：UN2211,
MMUN2211价格
参考价格：￥0.0707
型号：MMUN2211LT1G 品牌：ON 备注：这里有MMUN2211多少钱，2025年最近7天走势，今日出价，今日竞价，MMUN2211批发/采购报价，MMUN2211行情走势销售排行榜，MMUN2211报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMUN2211 | Bias Resistor Transistor NPN Silicon Bias Resistor Transistor NPN Silicon P/b Lead(Pb)-Free | WEITRON |   | |
MMUN2211 | Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consi | ETL 亚历电子 | | |
MMUN2211 | SOT-23 Plastic-Encapsulate Bias Resistor Transistor SOT-23 Plastic-Encapsulate Bias Resistor Transistor NP N Silicon | HDSEMI 海德半导体 | | |
MMUN2211 | Bias Resistor Transistor 文件：470.99 Kbytes Page：10 Pages | WEITRON | | |
MMUN2211 | 数字三极管 | BLUECOLOUR 蓝彩电子 | | |
MMUN2211 | Digital Transistors | WILLAS 威伦电子 | | |
MMUN2211 | NPN Silicon Epitaxial Planar Transistor | ETC 知名厂家 | ETC | |
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolith | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consistin | Motorola 摩托罗拉 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolith | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolith | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | LRC 乐山无线电 | | ||
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consi | ETL 亚历电子 | | ||
Bias Resistor Transistor 文件：470.99 Kbytes Page：10 Pages | WEITRON | | ||
Digital Transistors (BRT) 文件：140.01 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：149.21 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：104.94 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor 文件：177.51 Kbytes Page：18 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：140.01 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：149.21 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor 文件：177.51 Kbytes Page：18 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS NPN 246MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：100.37 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistor 文件：177.51 Kbytes Page：18 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：149.21 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：140.01 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Microminiature Reed Relays MICROMINIATURE REED RELAYS Ideally suited to the needs of Automated Test Equipment and RF requirements. The specification tables allow you to select the appropriate relay for your particular application. If your requirements differ, please consult your local representative or Coto’s Factory. 220 | RHOPOINT | | ||
FIXED DIP DELAY LINE TD/TR = 10 FUNCTIONAL DESCRIPTION The 2211-series device is a fixed, single-input, single-output, passive delay line. The signal input (IN) is reproduced at the output (OUT) with a delay (TD) given by the device dash number. The characteristic impedance of the line is given by the letter code that follows t | DATADELAY | | ||
FIXED DIP DELAY LINE [Data-Delay-Devices] FUNCTIONAL DESCRIPTION The 2211-series device is a fixed, single-input, single-output, passive delay line. The signal input (IN) is reproduced at the output (OUT) with a delay (TD) given by the device dash number. The characteristic impedance of the line is given by the lett | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
data delay devices [J.W.Miller] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
high Current Toroid Inductors [J.W.Miller] | ETCList of Unclassifed Manufacturers 未分类制造商 | |
MMUN2211产品属性
- 类型
描述
- 型号
MMUN2211
- 制造商
WEITRON
- 制造商全称
Weitron Technology
- 功能描述
Bias Resistor Transistor NPN Silicon
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOT-23 |
113400 |
||||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
MOT |
25+ |
SOP8 |
18000 |
原厂直接发货进口原装 |
|||
ON |
21+ |
SOT-23 |
120000 |
全新原装公司现货
|
|||
ON(安森美) |
23+ |
SOT-23(SOT-23-3) |
13079 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
23+ |
SOT-23 |
12580 |
进口原装现货 |
|||
ON/安森美 |
21+ |
SOT-23 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
13048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
24+ |
SOT-23 |
20000 |
十年沉淀唯有原装 |
|||
ON |
25+23+ |
SOT23 |
11189 |
绝对原装正品全新进口深圳现货 |
MMUN2211芯片相关品牌
MMUN2211规格书下载地址
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MMUN2211数据表相关新闻
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2019-11-15MNLM129A-X-精密基准
一般描述 该LM129是多方面的，当前的温度补偿的6.9V稳压管的参考与精密 10至100倍以上的分立二极管少动态阻抗。建于一单硅芯片，LM129使用有源电路来缓冲允许内部齐纳器件工作在0.5 mA至15毫安范围内几乎没有变化性能。该LM129是选择的温度系数为0.001可用，0.002，0.005和0.01％/ c.这些新的引用也有良好的长期稳定性和低噪音。齐纳击穿一个新的地下使用的LM129提供低噪声和更好的长期稳定性比coventional集成电路齐纳二极管。进一步Zener和温度补偿晶体管是由一个平面进程，以便他们有免疫问题困扰普通的齐纳二极管。例如，几乎没有在齐纳
2013-3-17
DdatasheetPDF页码索引
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