NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.3Watts(Tamb=25°C) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : Y1 • Case Material: Molded Plastic. UL Flammability

NPN Silicon Plastic-Encapsulate Transistor Collector-base Voltage 40V

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NPN Silicon Plastic-Encapsulate Transistor

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小信号双极型晶体管

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 25V 1.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors