NPN Silicon Plastic-Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55°C to +150°C • Mar

NPN Silicon Plastic-Encapsulate Transistor

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小信号双极型晶体管

NPN Silicon Plastic-Encapsulate Transistor

文件：340.4 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be